AGMSEMI-Single FETs, MOSFETs-AGM40P30A

Description

Drain to Source Voltage;40V/Gate Charge(Qg);27nC@10V/Number;1 P-Channel/Pd - Power Dissipation;59W/RDS(on);23mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.12nF


P-Channel 40V 38A 59W Surface Mount PDFN5x6-8

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);27nC@10V/Number;1 P-Channel/Pd - Power Dissipation;59W/RDS(on);23mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);27nC@10V/Number;1 P-Channel/Pd - Power Dissipation;59W/RDS(on);23mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.12nF


    P-Channel 40V 38A 59W Surface Mount PDFN5x6-8

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