AGMSEMI-Single FETs, MOSFETs-AGM40P30AP

Description

Drain to Source Voltage;40V/Gate Charge(Qg);27nC@10V/Number;1 P-Channel/Pd - Power Dissipation;59W/RDS(on);26mΩ@10V;42mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);171pF/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;1.82nF/Output Capacitance(Coss);200pF


P-Channel 40V 33A 59W Surface Mount PDFN-8(3.3x3.3)

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);27nC@10V/Number;1 P-Channel/Pd - Power Dissipation;59W/RDS(on);26mΩ@10V;42mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);171pF/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);27nC@10V/Number;1 P-Channel/Pd - Power Dissipation;59W/RDS(on);26mΩ@10V;42mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);171pF/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;1.82nF/Output Capacitance(Coss);200pF


    P-Channel 40V 33A 59W Surface Mount PDFN-8(3.3x3.3)

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