AGMSEMI-Single FETs, MOSFETs-AGM420MAP

Description

Drain to Source Voltage;40V;40V/Gate Charge(Qg);8.9nC@10V;20nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;25W/RDS(on);16mΩ@10V;42mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);43pF;64pF/Current - Continuous Drain(Id);13.5A;10.8A/Gate Threshold Voltage (Vgs(th));1.7V;1.6V/Ciss-Input Capacitance;516pF;750pF/Output Capacitance(Coss);82pF;105pF


N-Channel+P-Channel 40V 13.5A 25W Surface Mount PDFN-8(3.3x3.3)

Product form

Drain to Source Voltage;40V;40V/Gate Charge(Qg);8.9nC@10V;20nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;25W/RDS(on);16mΩ@10V;42mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);43pF;64pF/Current -... Read more

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    Description

    Drain to Source Voltage;40V;40V/Gate Charge(Qg);8.9nC@10V;20nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;25W/RDS(on);16mΩ@10V;42mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);43pF;64pF/Current - Continuous Drain(Id);13.5A;10.8A/Gate Threshold Voltage (Vgs(th));1.7V;1.6V/Ciss-Input Capacitance;516pF;750pF/Output Capacitance(Coss);82pF;105pF


    N-Channel+P-Channel 40V 13.5A 25W Surface Mount PDFN-8(3.3x3.3)

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