AGMSEMI-Single FETs, MOSFETs-AGM55P10D

Description

Drain to Source Voltage;100V/Gate Charge(Qg);773nC@10V/Number;1 P-Channel/Pd - Power Dissipation;50W/RDS(on);52mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;4.507nF


P-Channel 100V 30A 50W Surface Mount TO-252

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);773nC@10V/Number;1 P-Channel/Pd - Power Dissipation;50W/RDS(on);52mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

$4.17 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);773nC@10V/Number;1 P-Channel/Pd - Power Dissipation;50W/RDS(on);52mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;4.507nF


    P-Channel 100V 30A 50W Surface Mount TO-252

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