AGMSEMI-Single FETs, MOSFETs-AGM6015H

Description

Drain to Source Voltage;60V/Gate Charge(Qg);173nC@10V/Number;1 N-channel/Pd - Power Dissipation;255W/RDS(on);1.5mΩ@10V;2.1mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);210A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;9.76nF


N-Channel 60V 210A 255W Surface Mount TO-263

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);173nC@10V/Number;1 N-channel/Pd - Power Dissipation;255W/RDS(on);1.5mΩ@10V;2.1mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);210A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

$2.43 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);173nC@10V/Number;1 N-channel/Pd - Power Dissipation;255W/RDS(on);1.5mΩ@10V;2.1mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);210A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;9.76nF


    N-Channel 60V 210A 255W Surface Mount TO-263

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