AGMSEMI-Single FETs, MOSFETs-AGM601AD

Description

Drain to Source Voltage;60V/Gate Charge(Qg);102nC@10V/Number;1 N-channel/Pd - Power Dissipation;178W/RDS(on);2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);86pF/Current - Continuous Drain(Id);223A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;5.471nF


N-Channel 60V 223A 178W Surface Mount PTO-252

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);102nC@10V/Number;1 N-channel/Pd - Power Dissipation;178W/RDS(on);2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);86pF/Current - Continuous Drain(Id);223A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);102nC@10V/Number;1 N-channel/Pd - Power Dissipation;178W/RDS(on);2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);86pF/Current - Continuous Drain(Id);223A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;5.471nF


    N-Channel 60V 223A 178W Surface Mount PTO-252

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