AGMSEMI-Single FETs, MOSFETs-AGM6035F

Description

Drain to Source Voltage;60V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;208W/RDS(on);2.4mΩ@10V;3.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;3.59nF/Output Capacitance(Coss);1.08nF


60V 130A 208W Through Hole TO-220F

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;208W/RDS(on);2.4mΩ@10V;3.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;208W/RDS(on);2.4mΩ@10V;3.3mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;3.59nF/Output Capacitance(Coss);1.08nF


    60V 130A 208W Through Hole TO-220F

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