AGMSEMI-Single FETs, MOSFETs-AGM60P30C

Description

Drain to Source Voltage;60V/Gate Charge(Qg);9.8nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;34W/RDS(on);49mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;740pF/Output Capacitance(Coss);114pF


P-Channel 60V 30A 34W Through Hole TO-220

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);9.8nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;34W/RDS(on);49mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

$4.41 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);9.8nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;34W/RDS(on);49mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;740pF/Output Capacitance(Coss);114pF


    P-Channel 60V 30A 34W Through Hole TO-220

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