AGMSEMI-Single FETs, MOSFETs-AGM612C

Description

Drain to Source Voltage;60V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Pd - Power Dissipation;78W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.9pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;1nF/Output Capacitance(Coss);170pF


60V 60A 78W Through Hole TO-220

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Pd - Power Dissipation;78W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.9pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Pd - Power Dissipation;78W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.9pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;1nF/Output Capacitance(Coss);170pF


    60V 60A 78W Through Hole TO-220

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