AGMSEMI-Single FETs, MOSFETs-AGM612I

Description

Drain to Source Voltage;60V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Pd - Power Dissipation;78W/RDS(on);11mΩ@10V;15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.9pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1nF/Output Capacitance(Coss);170pF


60V 50A 78W Through Hole TO-251

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Pd - Power Dissipation;78W/RDS(on);11mΩ@10V;15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.9pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

$2.88 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Pd - Power Dissipation;78W/RDS(on);11mΩ@10V;15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9.9pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1nF/Output Capacitance(Coss);170pF


    60V 50A 78W Through Hole TO-251

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