AGMSEMI-Single FETs, MOSFETs-AGM665E

Description

Drain to Source Voltage;60V/Gate Charge(Qg);8.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.25W/RDS(on);60mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);23pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;400pF/Output Capacitance(Coss);28pF


N-Channel 60V 3A 1.25W Surface Mount SOT23-3

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);8.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.25W/RDS(on);60mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);23pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input... Read more

$1.41 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);8.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.25W/RDS(on);60mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);23pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;400pF/Output Capacitance(Coss);28pF


    N-Channel 60V 3A 1.25W Surface Mount SOT23-3

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