AGMSEMI-Single FETs, MOSFETs-AGM6805C

Description

Drain to Source Voltage;68V/Gate Charge(Qg);76nC@10V/Pd - Power Dissipation;111W/RDS(on);6.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);98A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.723nF


68V 98A 111W Through Hole TO-220

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Drain to Source Voltage;68V/Gate Charge(Qg);76nC@10V/Pd - Power Dissipation;111W/RDS(on);6.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);98A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.723nF68V 98A 111W Through... Read more

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    Description

    Drain to Source Voltage;68V/Gate Charge(Qg);76nC@10V/Pd - Power Dissipation;111W/RDS(on);6.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);98A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.723nF


    68V 98A 111W Through Hole TO-220

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