AGMSEMI-Single FETs, MOSFETs-AGMH022N10C

Description

Drain to Source Voltage;100V/Gate Charge(Qg);158nC@10V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);2.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);107pF/Current - Continuous Drain(Id);220A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;6.132nF/Output Capacitance(Coss);2.2nF


100V 220A 300W Through Hole TO-220

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);158nC@10V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);2.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);107pF/Current - Continuous Drain(Id);220A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);158nC@10V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);2.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);107pF/Current - Continuous Drain(Id);220A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;6.132nF/Output Capacitance(Coss);2.2nF


    100V 220A 300W Through Hole TO-220

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