AGMSEMI-Single FETs, MOSFETs-AGMH022N10H

Description

Drain to Source Voltage;100V/Gate Charge(Qg);158nC@10V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);2.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);220A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;11.5nF


N-Channel 100V 220A 300W Surface Mount TO-263

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);158nC@10V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);2.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);220A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$2.91 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);158nC@10V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);2.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);220A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;11.5nF


    N-Channel 100V 220A 300W Surface Mount TO-263

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