AGMSEMI-Single FETs, MOSFETs-AGMH03N85C

Description

Drain to Source Voltage;85V/Gate Charge(Qg);102nC@10V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;6.89nF


N-Channel 85V 140A 227W Through Hole TO-220

Product form

Drain to Source Voltage;85V/Gate Charge(Qg);102nC@10V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;85V/Gate Charge(Qg);102nC@10V/Number;1 N-channel/Pd - Power Dissipation;227W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);140A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;6.89nF


    N-Channel 85V 140A 227W Through Hole TO-220

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