AGMSEMI-Single FETs, MOSFETs-AGMH1405C

Description

Drain to Source Voltage;45V/Gate Charge(Qg);80nC@10V/Number;1 N-channel/Pd - Power Dissipation;96W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.4nF/Output Capacitance(Coss);250pF


N-Channel 45V 100A 96W Through Hole TO-220

Product form

Drain to Source Voltage;45V/Gate Charge(Qg);80nC@10V/Number;1 N-channel/Pd - Power Dissipation;96W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;45V/Gate Charge(Qg);80nC@10V/Number;1 N-channel/Pd - Power Dissipation;96W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);200pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.4nF/Output Capacitance(Coss);250pF


    N-Channel 45V 100A 96W Through Hole TO-220

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