AGMSEMI-Single FETs, MOSFETs-AGMH403C-G

Description

Drain to Source Voltage;40V/Gate Charge(Qg);42nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;70W/RDS(on);2.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.948nF/Output Capacitance(Coss);489pF


N-Channel 40V 110A 70W Through Hole TO-220

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);42nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;70W/RDS(on);2.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);42nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;70W/RDS(on);2.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.948nF/Output Capacitance(Coss);489pF


    N-Channel 40V 110A 70W Through Hole TO-220

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