AGMSEMI-Single FETs, MOSFETs-AGMH6018C

Description

Drain to Source Voltage;60V/Gate Charge(Qg);65nC@10V/Number;1 N-channel/Pd - Power Dissipation;260W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.525nF/Output Capacitance(Coss);1.769nF


N-Channel 60V 150A 260W Through Hole TO-220

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);65nC@10V/Number;1 N-channel/Pd - Power Dissipation;260W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);65nC@10V/Number;1 N-channel/Pd - Power Dissipation;260W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.525nF/Output Capacitance(Coss);1.769nF


    N-Channel 60V 150A 260W Through Hole TO-220

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