AGMSEMI-Single FETs, MOSFETs-AGMH614H

Description

Drain to Source Voltage;60V/Gate Charge(Qg);38nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;66W/RDS(on);11mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);102pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;1.72nF/Output Capacitance(Coss);119pF


N-Channel 60V 50A 66W Surface Mount TO-263

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);38nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;66W/RDS(on);11mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);102pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);38nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;66W/RDS(on);11mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);102pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;1.72nF/Output Capacitance(Coss);119pF


    N-Channel 60V 50A 66W Surface Mount TO-263

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