AGMSEMI-Single FETs, MOSFETs-AGML315ME

Description

Drain to Source Voltage;30V/Gate Charge(Qg);17nC@10V;8nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.28W/RDS(on);25mΩ@10V;43mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF;62pF/Current - Continuous Drain(Id);5.6A;4.2A/Gate Threshold Voltage (Vgs(th));900mV;1.3V/Ciss-Input Capacitance;562pF;475pF/Output Capacitance(Coss);71pF;74pF


N-Channel+P-Channel 30V 5.6A 1.28W Surface Mount SOT-23-6L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);17nC@10V;8nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.28W/RDS(on);25mΩ@10V;43mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF;62pF/Current -... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);17nC@10V;8nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.28W/RDS(on);25mΩ@10V;43mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF;62pF/Current - Continuous Drain(Id);5.6A;4.2A/Gate Threshold Voltage (Vgs(th));900mV;1.3V/Ciss-Input Capacitance;562pF;475pF/Output Capacitance(Coss);71pF;74pF


    N-Channel+P-Channel 30V 5.6A 1.28W Surface Mount SOT-23-6L

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