APEC-Single FETs, MOSFETs-AP10TN004CMT

Description

Drain to Source Voltage;100V/Gate Charge(Qg);73nC/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);4.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.12nF/Output Capacitance(Coss);650pF


100V 4.8mΩ@10V 1 N-channel 104W DFN-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);73nC/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);4.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);73nC/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);4.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.12nF/Output Capacitance(Coss);650pF


    100V 4.8mΩ@10V 1 N-channel 104W DFN-8(5x6) Single FETs, MOSFETs RoHS

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