APEC-Single FETs, MOSFETs-AP10TN135N

Description

Drain to Source Voltage;100V/Gate Charge(Qg);20nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.38W/RDS(on);135mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);2.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;980pF/Output Capacitance(Coss);40pF


N-Channel 100V 2.1A 1.38W Surface Mount SOT-23

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);20nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.38W/RDS(on);135mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);2.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);20nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.38W/RDS(on);135mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);2.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;980pF/Output Capacitance(Coss);40pF


    N-Channel 100V 2.1A 1.38W Surface Mount SOT-23

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