APEC-Single FETs, MOSFETs-AP2309GEN

Description

Drain to Source Voltage;30V/Gate Charge(Qg);7nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.25W/RDS(on);52mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;830pF


30V 52mΩ@10V 1 P-Channel 1.25W SOT-23S Single FETs, MOSFETs RoHS

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Drain to Source Voltage;30V/Gate Charge(Qg);7nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.25W/RDS(on);52mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);7nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.25W/RDS(on);52mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;830pF


    30V 52mΩ@10V 1 P-Channel 1.25W SOT-23S Single FETs, MOSFETs RoHS

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