APEC-Single FETs, MOSFETs-AP4453GYT

Description

Drain to Source Voltage;30V/Gate Charge(Qg);24nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;3.13W/RDS(on);10.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);12.8A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;2.96nF


30V 10.1mΩ@10V 1 P-Channel 3.13W PMPAK(3x3) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);24nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;3.13W/RDS(on);10.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);12.8A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);24nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;3.13W/RDS(on);10.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);12.8A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;2.96nF


    30V 10.1mΩ@10V 1 P-Channel 3.13W PMPAK(3x3) Single FETs, MOSFETs RoHS

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