APEC-Single FETs, MOSFETs-AP4525GEH

Description

Drain to Source Voltage;40V/Gate Charge(Qg);24nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;10.4W/RDS(on);60mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Current - Continuous Drain(Id);15A;12A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.23nF/Output Capacitance(Coss);165pF


N-Channel+P-Channel Array 40V Surface Mount TO-252-4L

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);24nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;10.4W/RDS(on);60mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Current -... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);24nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;10.4W/RDS(on);60mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Current - Continuous Drain(Id);15A;12A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.23nF/Output Capacitance(Coss);165pF


    N-Channel+P-Channel Array 40V Surface Mount TO-252-4L

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