APEC-Single FETs, MOSFETs-AP6679BGH

Description

Drain to Source Voltage;30V/Gate Charge(Qg);44nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;54.3W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);495pF/Current - Continuous Drain(Id);63A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;3.5nF


P-Channel 30V 63A 54.3W Surface Mount TO-252

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);44nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;54.3W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);495pF/Current - Continuous Drain(Id);63A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);44nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;54.3W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);495pF/Current - Continuous Drain(Id);63A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;3.5nF


    P-Channel 30V 63A 54.3W Surface Mount TO-252

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