APEC-Single FETs, MOSFETs-AP6P025M

Description

Drain to Source Voltage;60V/Gate Charge(Qg);54.4nC/Number;1 P-Channel/Pd - Power Dissipation;2.5W/RDS(on);25mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);170pF/Current - Continuous Drain(Id);7.3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;6.4nF


P-Channel 60V 7.3A 2.5W Surface Mount SO-8

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);54.4nC/Number;1 P-Channel/Pd - Power Dissipation;2.5W/RDS(on);25mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);170pF/Current - Continuous Drain(Id);7.3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);54.4nC/Number;1 P-Channel/Pd - Power Dissipation;2.5W/RDS(on);25mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);170pF/Current - Continuous Drain(Id);7.3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;6.4nF


    P-Channel 60V 7.3A 2.5W Surface Mount SO-8

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