APEC-Single FETs, MOSFETs-AP9435GM

Description

Drain to Source Voltage;30V/Gate Charge(Qg);14.6nC/Number;1 P-Channel/Pd - Power Dissipation;2.5W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);5.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;570pF


30V 50mΩ@10V 1 P-Channel 2.5W SO-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);14.6nC/Number;1 P-Channel/Pd - Power Dissipation;2.5W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);5.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);14.6nC/Number;1 P-Channel/Pd - Power Dissipation;2.5W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);5.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;570pF


    30V 50mΩ@10V 1 P-Channel 2.5W SO-8 Single FETs, MOSFETs RoHS

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