APEC-Single FETs, MOSFETs-AP9567GH

Description

Drain to Source Voltage;40V/Gate Charge(Qg);19nC/Number;1 P-Channel/Pd - Power Dissipation;34.7W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);22A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.4nF


40V 50mΩ@10V 1 P-Channel 34.7W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);19nC/Number;1 P-Channel/Pd - Power Dissipation;34.7W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);22A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);19nC/Number;1 P-Channel/Pd - Power Dissipation;34.7W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);22A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.4nF


    40V 50mΩ@10V 1 P-Channel 34.7W TO-252 Single FETs, MOSFETs RoHS

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