APEC-Single FETs, MOSFETs-AP9T18GH-HF

Description

Drain to Source Voltage;20V/Number;1 N-channel/Pd - Power Dissipation;31.3W/RDS(on);28mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.79nF


20V 28mΩ@2.5V 1 N-channel 31.3W TO-252-2(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Number;1 N-channel/Pd - Power Dissipation;31.3W/RDS(on);28mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.79nF20V 28mΩ@2.5V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;20V/Number;1 N-channel/Pd - Power Dissipation;31.3W/RDS(on);28mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.79nF


    20V 28mΩ@2.5V 1 N-channel 31.3W TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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