Bestirpower-Single FETs, MOSFETs-BMD80N400E1

Description

Drain to Source Voltage;800V/Gate Charge(Qg);20.4nC/Type;N-Channel/Pd - Power Dissipation;105W/RDS(on);400mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.29pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.1346nF


800V 400mΩ@10V 105W DPAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);20.4nC/Type;N-Channel/Pd - Power Dissipation;105W/RDS(on);400mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.29pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.1346nF800V... Read more

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);20.4nC/Type;N-Channel/Pd - Power Dissipation;105W/RDS(on);400mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.29pF/Current - Continuous Drain(Id);13A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;1.1346nF


    800V 400mΩ@10V 105W DPAK Single FETs, MOSFETs RoHS

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