Bestirpower-Single FETs, MOSFETs-BMT60N105E1

Description

Drain to Source Voltage;600V/Gate Charge(Qg);52nC/Number;1 N-channel/Pd - Power Dissipation;260W/RDS(on);105mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);31A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;2.27nF


600V 105mΩ@10V 1 N-channel 260W TOLL-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);52nC/Number;1 N-channel/Pd - Power Dissipation;260W/RDS(on);105mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);31A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;2.27nF600V 105mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);52nC/Number;1 N-channel/Pd - Power Dissipation;260W/RDS(on);105mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);31A/Gate Threshold Voltage (Vgs(th));3.3V/Ciss-Input Capacitance;2.27nF


    600V 105mΩ@10V 1 N-channel 260W TOLL-8 Single FETs, MOSFETs RoHS

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