BL-Single FETs, MOSFETs-BL3N150-B

Description

Drain to Source Voltage;1.5kV/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;140W/RDS(on);5.8Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.7pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.45nF


N-Channel 1.5kV 3A 140W Surface Mount TO-263

Product form

Drain to Source Voltage;1.5kV/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;140W/RDS(on);5.8Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.7pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;1.5kV/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;140W/RDS(on);5.8Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.7pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.45nF


    N-Channel 1.5kV 3A 140W Surface Mount TO-263

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