BL-Single FETs, MOSFETs-BL4N90-P

Description

Drain to Source Voltage;900V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;140W/RDS(on);3Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;900pF/Output Capacitance(Coss);70pF


N-Channel 900V 4A 140W Through Hole TO-220

Product form

Drain to Source Voltage;900V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;140W/RDS(on);3Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;900V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;140W/RDS(on);3Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;900pF/Output Capacitance(Coss);70pF


    N-Channel 900V 4A 140W Through Hole TO-220

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