BORN-Single FETs, MOSFETs-BMDFN2301

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;320mW/RDS(on);650mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19pF/Current - Continuous Drain(Id);740mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;104pF/Output Capacitance(Coss);25pF


P-Channel 20V 0.74A 0.32W Surface Mount DFN1006-3L

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);1.1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;320mW/RDS(on);650mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19pF/Current - Continuous Drain(Id);740mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;320mW/RDS(on);650mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19pF/Current - Continuous Drain(Id);740mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;104pF/Output Capacitance(Coss);25pF


    P-Channel 20V 0.74A 0.32W Surface Mount DFN1006-3L

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