BORN-Single FETs, MOSFETs-BMF12N65G

Description

Drain to Source Voltage;650V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);700mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.45nF/Output Capacitance(Coss);140pF


N-Channel 650V 12A 42W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);700mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.45nF/Output Capacitance(Coss);140pFN-Channel... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;42W/RDS(on);700mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.45nF/Output Capacitance(Coss);140pF


    N-Channel 650V 12A 42W Through Hole TO-220F

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