BORN-Single FETs, MOSFETs-BMF4N65

Description

Drain to Source Voltage;650V/Gate Charge(Qg);15nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;30W/RDS(on);2.8Ω@10V/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;610pF


N-Channel 650V 4A 30W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);15nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;30W/RDS(on);2.8Ω@10V/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;610pFN-Channel 650V 4A 30W Through... Read more

$3.36 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);15nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;30W/RDS(on);2.8Ω@10V/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;610pF


    N-Channel 650V 4A 30W Through Hole TO-220F

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