BORN-Single FETs, MOSFETs-BMI03N820

Description

Drain to Source Voltage;30V/Gate Charge(Qg);18.8nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);8.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);45A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;860pF


N-Channel 30V 45A 45W Surface Mount TO-252-2

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);18.8nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);8.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);45A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;860pFN-Channel 30V 45A... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);18.8nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);8.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);45A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;860pF


    N-Channel 30V 45A 45W Surface Mount TO-252-2

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