BORN-Single FETs, MOSFETs-BMI404D1538

Description

Drain to Source Voltage;40V/Gate Charge(Qg);23nC@10V;23.5nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;35W/RDS(on);12mΩ@10V;28mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);142pF;125pF/Current - Continuous Drain(Id);30A;18A/Gate Threshold Voltage (Vgs(th));1.9V/Ciss-Input Capacitance;1.512nF;1.217nF/Output Capacitance(Coss);208pF;198pF


40V 1 N-Channel + 1 P-Channel 35W TO-252-4L Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);23nC@10V;23.5nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;35W/RDS(on);12mΩ@10V;28mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);142pF;125pF/Current - Continuous Drain(Id);30A;18A/Gate... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);23nC@10V;23.5nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;35W/RDS(on);12mΩ@10V;28mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);142pF;125pF/Current - Continuous Drain(Id);30A;18A/Gate Threshold Voltage (Vgs(th));1.9V/Ciss-Input Capacitance;1.512nF;1.217nF/Output Capacitance(Coss);208pF;198pF


    40V 1 N-Channel + 1 P-Channel 35W TO-252-4L Single FETs, MOSFETs RoHS

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