BORN-Single FETs, MOSFETs-BSS123

Description

Drain to Source Voltage;100V/Gate Charge(Qg);740pC@50V/Number;1 N-channel/Pd - Power Dissipation;200mW/RDS(on);4Ω@4.5V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2pF/Current - Continuous Drain(Id);200mA/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;31.6pF


N-Channel 100V 0.2A 0.2W Surface Mount SOT-23

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);740pC@50V/Number;1 N-channel/Pd - Power Dissipation;200mW/RDS(on);4Ω@4.5V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2pF/Current - Continuous Drain(Id);200mA/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);740pC@50V/Number;1 N-channel/Pd - Power Dissipation;200mW/RDS(on);4Ω@4.5V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2pF/Current - Continuous Drain(Id);200mA/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;31.6pF


    N-Channel 100V 0.2A 0.2W Surface Mount SOT-23

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