FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));2V@1nA/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;350mW/RDS(on);60Ω/Drain Current (Idss);25mA@20V/Ciss-Input Capacitance;14pF@20V/Operating Temperature;-65℃~+150℃1 N-channel 350mW 25mA@20V 60Ω... Read more

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