FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));500mV@1nA/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;350mW/RDS(on);100Ω/Ciss-Input Capacitance;14pF@20V/Operating Temperature;-65℃~+150℃1 N-channel 350mW 100Ω 40V SOT-23 JFETs... Read more

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