FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));2.5V@1nA/Gate-Source Breakdown Voltage (Vgss);35V/Pd - Power Dissipation;350mW/Drain Current (Idss);5mA@15V/Ciss-Input Capacitance;4.5pF@15V/Operating Temperature;-65℃~+150℃5mA@15V 1 N-channel 350mW 35V... Read more

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