FET Type;1 P-Channel/Gate-Source Cutoff Voltage (VGS(off));1V@10nA/Gate-Source Breakdown Voltage (Vgss);30V/Pd - Power Dissipation;225mW/RDS(on);250Ω/Drain Current (Idss);2mA@15V/Operating Temperature;-65℃~+150℃225mW 1 P-Channel 2mA@15V 250Ω 30V... Read more

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