FET Type;1 N-channel/Gate-Source Cutoff Voltage (VGS(off));500mV@1nA/Gate-Source Breakdown Voltage (Vgss);40V/Pd - Power Dissipation;625mW/Drain Current (Idss);5mA@20V/Ciss-Input Capacitance;14pF@20V/Operating Temperature;-65℃~+150℃625mW 1 N-channel 5mA@20V 40V... Read more

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