Central-Single FETs, MOSFETs-CDM22010-650 SL

Description

Drain to Source Voltage;650V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W;156W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.168nF


650V 1Ω@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W;156W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.168nF650V 1Ω@10V 1... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W;156W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.168nF


    650V 1Ω@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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