Central-Single FETs, MOSFETs-CEDM8004 BK PBFREE

Description

Drain to Source Voltage;30V/Gate Charge(Qg);880pC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;100mW/RDS(on);1.1Ω@4.5V/Operating Temperature -;-65℃~+150℃/Current - Continuous Drain(Id);450mA/Gate Threshold Voltage (Vgs(th));1.1V/Ciss-Input Capacitance;55pF


30V 1.1Ω@4.5V 1 P-Channel 100mW SOT-883 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);880pC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;100mW/RDS(on);1.1Ω@4.5V/Operating Temperature -;-65℃~+150℃/Current - Continuous Drain(Id);450mA/Gate Threshold Voltage (Vgs(th));1.1V/Ciss-Input Capacitance;55pF30V 1.1Ω@4.5V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);880pC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;100mW/RDS(on);1.1Ω@4.5V/Operating Temperature -;-65℃~+150℃/Current - Continuous Drain(Id);450mA/Gate Threshold Voltage (Vgs(th));1.1V/Ciss-Input Capacitance;55pF


    30V 1.1Ω@4.5V 1 P-Channel 100mW SOT-883 Single FETs, MOSFETs RoHS

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