Central-Single FETs, MOSFETs-CWDM3011N TR13 PBFREE

Description

Drain to Source Voltage;30V/Gate Charge(Qg);6.3nC@5V/Number;1 N-channel/Pd - Power Dissipation;2.5W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;860pF


30V 20mΩ@10V 1 N-channel 2.5W SOIC-8 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;30V/Gate Charge(Qg);6.3nC@5V/Number;1 N-channel/Pd - Power Dissipation;2.5W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);6.3nC@5V/Number;1 N-channel/Pd - Power Dissipation;2.5W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);120pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;860pF


    30V 20mΩ@10V 1 N-channel 2.5W SOIC-8 Single FETs, MOSFETs RoHS

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