/Gate Charge(Qg);13nC@10V/Type;N-Channel/Pd - Power Dissipation;83W/RDS(on);280mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));4V280mΩ@10V 83W TO-252 Single FETs, MOSFETs RoHS Read more

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