DIODES-Bipolar Transistor Arrays, Pre-Biased-DDA114TU-7-F

Description

Number;1 NPN Pre-Biased, 1 PNP Pre-Biased/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;200mW/type;NPN+PNP/DC Current Gain;160/Emitter-Base Voltage VEBO;5V/Voltage - Input(Max)(VI(off));3V/Output Voltage(VO(on));300mV/Input Resistor;10kΩ/Resistor Ratio;20/Operating Temperature;-55℃~+150℃/Vce Saturation(VCE(sat));300mV/Transition frequency(fT);250MHz/Current - Collector Cutoff;0.5uA


Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-363

Product form

Number;1 NPN Pre-Biased, 1 PNP Pre-Biased/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;200mW/type;NPN+PNP/DC Current Gain;160/Emitter-Base Voltage VEBO;5V/Voltage -... Read more

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    Description

    Number;1 NPN Pre-Biased, 1 PNP Pre-Biased/Collector - Emitter Voltage VCEO;50V/Current - Collector(Ic);100mA/Pd - Power Dissipation;200mW/type;NPN+PNP/DC Current Gain;160/Emitter-Base Voltage VEBO;5V/Voltage - Input(Max)(VI(off));3V/Output Voltage(VO(on));300mV/Input Resistor;10kΩ/Resistor Ratio;20/Operating Temperature;-55℃~+150℃/Vce Saturation(VCE(sat));300mV/Transition frequency(fT);250MHz/Current - Collector Cutoff;0.5uA


    Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-363

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